tsixxb1 ? telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : telephone set base station for cordless set fax machine modem caller id equipment set top box main application so8 the tsixxb1 provides the diode bridge and the crowbar protection function that can be found in most of telecom terminal equipment. integrated monolithically within a so8 package, this asd ? device allows space saving on the board and greater reliability. description ccitt k17 - k20 10/700 m s 1.5 kv 5/310 m s 38a vde 0433 10/700 m s2 kv 5/310 m s 40a(*) cnet 0.5/700 m s 1.5 kv 0.2/310 m s 38a bellcore tr-nwt-000974 : 10/1000 m s1 kv 10/1000 m s 30a(*) fcc part 68 2/10 m s 2.5 kv 2/10 m s 75a (*) mil std883c method 3015-6 (*) with series resistor or ptc. in accordance with the following standards : schematic diagram terminal set interface protection and diode bridge january 1998 - ed: 3 diode bridge for polarity guard and crowbar protection within one device. single chip for greater reliability reduces component count versus discrete solution saves space on the board benefits stand-off voltage from 62v to 265v peak pulse current : 30 a (10/1000 m s) maximum dc current : i f = 0.2 a holding current :150 ma features application specific discretes a.s.d. ? tm: asd is trademarks of sgs-thomson microelectronics. 2 3 1 4 7 6 8 5 1/9
ptc typical application telecom terminals have a diode bridge for polarity guard, located at the line interface stage. they also have above this diode bridge one crowbar protection device that is mandatory to prevent atmospheric effects and ac mains disturbances from damaging the electronic circuitry that follows the diode bridge. sgs-thomson proposes a one chip device that includes both protection and diode bridge. this is the concept of the tsixxb1 devices. fig. 1 : the various uses of the tsixxb1 in a conventional telecom network tsixxb1 2/9
the v rm value corresponds to the maximum voltage of the application in normal operation. for instance, if the maximum line voltage is ranging between 100v rms of ringing plus 48v of battery voltage, then the protection chosen for this applica- tion shall have a v rm close to 200v. the v bo is the triggering voltage. this indicates the voltage limit for which the component short-circuits. passing this v bo makes the device turn on. the i bo is the current that makes the device turn on. indeed, if we want a trisil to be turned on not only the voltage across it shall pass the v bo value but the current through it shall also pass the i bo value. in other words, if a voltage surge occurring on the line is higher than the v bo value of a trisil, whereas the line surge current is limited to a value that does not exceed the trisils i bo value, then the trisil will never turn into short circuit. at this time the surge will be clamped by the trisil. anyhow the electronic circuitry located after the trisil will always be protected whatever the trisil state is (crowbar or clamping mode). the i h stands for the holding current. when the trisil is turned on, as soon as the crossing current surge gets lower than this i h value, the trisil protection device turns back in its idle state. remark : for this reason the trisil s i h value shall be chosen higher than what the maximum telecom line current can be. tsixxb1 behaviour with regard to surge standard : the tsixxb1 is able to replace both diode bridge and usual discrete protection on telecom terminals. furthermore it complies with the ccitt k17 recommendations : 10/700 m s waveform surge test, 1.5kv ac power induction test ac power contact test electrical parameters w fig. 2 : test circuit for the ccitt k17 recommendations tsixxb1 3/9
this test concerns the 10/700 m s waveform surge, 1.5 kv. the surge generator used for the test has the following circuitry (fig.2). test # 1 lightning simulation w w w fig. 2 : 10/700 m s waveform surge generator circuit the behaviour of the tsi200b1 to this lightning surge is given below (fig. 3). fig. 3 : voltage across the tsi200b1 at the + and - terminations and current throught it for a 1.5 kv positive surge (fig.3a) and negative surge (fig. 3b) these curves show the peak voltage the surge generates across the tsi200b1 + and - terminations. this lasts a short time ( ? 2 m s) and after, as the internal protection gehaves like a short circuit. the voltage drop across the tsixxb1 becomes a few volts. in the meanwhile all the surge current flows in the protection. as far as the 10/700 m s waveform surge test is concerned,the tsixxb1 withstand the 1.5 kv test. tsixxb1 4/9
this test simulates the induction phenomena that can happen between telecom lines and ac mains lines (fig. 4). test # 2 ac power induction test fig. 4 : ac power induction test circuit part #1 test conditions : v rms = 240 v r = 600 w t = 0.2 s part #2 test conditions : v rms = 600 v r = 600 w t = 0.2 s fig. 5 : voltage at the + and - terminations of the tsi200b1, and current through it while test part 1 is applied. the tsixxb1 withstand the ac power induction test in both cases. this test simulates the direct contact between the telecom lines and the ac mains lines. the ac power contact test consists in applying 240v rms through a 10 w ptc during 15 minutes long on the device under test. the ccitt k17 recommendation specifies an internal generator impedance allowing 10 a rms when in short circuit. the behavior of the tsi200b1 with respect to this surge is given in figure 6. test #3 ac power contact test fig. 6 : voltage at the tsi200b1 + & - terminations and the current through it. the figure 6 shows that after 250ms there is no current anymore flowing through the tsi200b1 device. this is due to the action of the serial ptc that limits the current through the line. this ptc is mandatory for this test. it can also be replaced by a fuse or any other serial protection that "opens" the line loop under ac contact test. tsixxb1 5/9
symbol parameter value unit i pp non repetitive peak on-sate current (see note 1) 10/1000 m s (open circuit voltage wave shape 10/100 m s) 5/310 m s (open circuit voltage wave shape 10/700 m s) 2/10 m s (open circuit voltage wave shape 2/10 m s) 30 40 75 a i f maximum dc current 0.2 a i tsm non repetitive surge peak on-state current tp = 20 ms t = 1s 5 3.5 a t stg t j storage temperature range maximum junction temperature - 55 to +150 150 c t l maximum lead temperature for soldering during 10 s 260 c absolute maximum ratings (t amb = 25 c) note 1 : pulse waveform : 10/1000 m st r =10 m st p =1000 m s 5/310 m st r =5 m st p =310 m s 2/10 m st r =2 m st p =10 m s 100 50 %i pp t t r p 0 t symbol parameter value unit r th(j-a) junction to ambient 170 c/w thermal resistance symbol parameter v rm stand-off voltage v bo breakover voltage v br breakdown voltage i h holding current i bo breakover current i rm leakage current at v rm i pp peak pulse current c capacitance a t temperature coefficient electrical characteristics (t amb =25c) v i v rm bo v rm i h i bo pp i i tsixxb1 6/9
type i rm @ v rm v bo @ i bo i h i bo c note1 note2 note1 note3 m av v ma mamapf max. max. min. min. max. typ. TSI62B1 1 5 50 62 90 150 50 400 200 tsi180b1 1 5 50 180 250 150 50 400 200 tsi200b1 1 5 50 200 290 150 50 400 200 tsi220b1 1 5 50 220 330 150 50 400 200 tsi265b1 1 5 50 265 380 150 50 400 200 note 1 : measured at 50 hz, one cycle note 2 : see test cricuit note 3 : v r = 0v, f = 1mhz, between pins 1 and 8. electrical characteristics (t amb = 25 c) 1 - protection devices parameters symbol test condition value unit v f (for one diode) i f = 20 ma i f = 100 ma 0.9 1.1 v v 2 - diode bridge parameters functional holding current (i h ) test circuit : go - no go test this is a go-nogo test which allows to confirm the holding current (i h ) level in a functional test circuit. test procedure : 1) adjust the current level at the i h value by short circuiting the d.u.t. 2) fire the d.u.t with a surge current : ipp = 10a , 10/1000 m s. 3) the d.u.t will come back off-state within a duration of 50 ms max. r -v p v bat =-48v surge generator d.u.t. tsixxb1 7/9
type marking TSI62B1 tsi62 tsi180b1 tsi180 tsi200b1 tsi200 tsi220b1 tsi220 tsi265b1 tsi265 marking order code rl = tape& reel (2500 pcs). = tube (100 pcs). so8 package tsi 265 b 1 rl v br min. terminal set interface tsixxb1 8/9
packaging : product supplied in tape and reel or antistatic tubes. information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. package mechanical data so8 ref. dimensions millimetres inches min. typ. max. min. typ. max. a 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 c 0.50 0.020 c1 45 (typ) d 4.8 5.0 0.189 0.197 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.15 0.157 tsixxb1 9/9
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